- Overview
- Product Description
Basic Info.
Model NO.
OST40N120HMF -1
Package
SMD
Signal Processing
Digital
Application
Television
Model
PC817
Batch Number
2010+
Brand
Orimental
Description
Extremely Low Switching Loss
Characteristics
Excellent Stability and Uniformity
Applications
PC Power
Industries
LED Lighting
Transport Package
Air
Trademark
Orientalsemiconductor
Origin
China
HS Code
854129000
Production Capacity
20K/Monthly
Packaging & Delivery
Package Size
35.00cm * 30.00cm * 37.00cm
Package Gross Weight
15.000kg
Product Description
General Description
The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability.The GreenMOS® Z series is integrated with fast recovery diode (FRD) to minimize reverse recovery time. It is suitable for resonant switching topologies to reach higher efficiency, higher reliability and smaller form factor.
Features
- Low RDS(ON) & FOM
- Extremely low switching loss
- Excellent stability and uniformity
- Ultra-fast and robust body diode
Applications
- PC power
- Telecom power
- Server power
- EV Charger
- Motor driver
Key Performance Parameters
| Parameter | Value | Unit |
| VDS, min @ Tj(max) | 650 | V |
| ID, pulse | 240 | A |
| RDS(ON), max @ VGS=10V | 30 | mΩ |
| Qg | 178 | nC |
Marking Information
| Product Name | Package | Marking |
| OSG60R030HZF | TO247 | OSG60R030HZ |
Absolute Maximum Ratings at Tj=25°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Value | Unit |
| Drain-source voltage | VDS | 600 | V |
| Gate-source voltage | VGS | ±30 | V |
| Continuous drain current1), TC=25 °C | ID | 80 | A |
| Continuous drain current1), TC=100 °C | 50 | ||
| Pulsed drain current2), TC=25 °C | ID, pulse | 240 | A |
| Continuous diode forward current1), TC=25 °C | IS | 80 | A |
| Diode pulsed current2), TC=25 °C | IS, pulse | 240 | A |
| Power dissipation3), TC=25 °C | PD | 480 | W |
| Single pulsed avalanche energy5) | EAS | 2500 | mJ |
| MOSFET dv/dt ruggedness, VDS=0…480 V | dv/dt | 50 | V/ns |
| Reverse diode dv/dt, VDS=0…480 V, ISD≤ID | dv/dt | 50 | V/ns |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C |
Thermal Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal resistance, junction-case | RθJC | 0.26 | °C/W |
| Thermal resistance, junction-ambient4) | RθJA | 62 | °C/W |
Electrical Characteristics at Tj=25°C unless otherwise specified
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0 V, ID=1 mA | ||
| Gate threshold voltage | VGS(th) | 3.0 | 4.5 | V | VDS=VGS, ID=2 mA, | |
Drain-source on-state resistance | RDS(ON) | 0.028 | 0.030 | Ω | VGS=10 V, ID=40 A | |
| 0.058 | VGS=10 V, ID=40 A, Tj=150 °C | |||||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V | ||
| -100 | VGS=-30 V | |||||
| Drain-source leakage current | IDSS | 10 | μA | VDS=600 V, VGS=0 V | ||
| Gate resistance | RG | 2.1 | Ω | ƒ=1 MHz, Open drain |
Dynamic Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Input capacitance | Ciss | 9343 | pF | VGS=0 V, VDS=50 V, ƒ=100 KHz | ||
| Output capacitance | Coss | 708 | pF | |||
| Reverse transfer capacitance | Crss | 15 | pF | |||
| Effective output capacitance, energy related | Co(er) | 345 | pF | VGS=0 V, VDS=0 V-400 V | ||
| Effective output capacitance, time related | Co(tr) | 1913 | pF | |||
| Turn-on delay time | td(on) | 52.1 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=40 A | ||
| Rise time | tr | 105.2 | ns | |||
| Turn-off delay time | td(off) | 125.7 | ns | |||
| Fall time | tf | 4.1 | ns |
Gate Charge Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Total gate charge | Qg | 177.9 | nC | VGS=10 V, VDS=400 V, ID=40 A | ||
| Gate-source charge | Qgs | 37.4 | nC | |||
| Gate-drain charge | Qgd | 78.4 | nC | |||
| Gate plateau voltage | Vplateau | 6.2 | V |
Body Diode Characteristics
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test condition |
| Diode forward voltage | VSD | 1.4 | V | IS=80 A, VGS=0 V | ||
| Reverse recovery time | trr | 186.6 | ns | IS=40 A, di/dt=100 A/μs | ||
| Reverse recovery charge | Qrr | 1.6 | μC | |||
| Peak reverse recovery current | Irrm | 15.4 | A |
Note
- Calculated continuous current based on maximum allowable junction temperature.
- Repetitive rating; pulse width limited by max. junction temperature.
- Pd is based on max. junction temperature, using junction-case thermal resistance.
- VDD=100 V, VGS=10 V, L=80 mH, starting Tj=25 °C.
1. What service do you have ?We are supplier and manufacturer of original Power mosfet and IGBT semiconductor,We could supply competitive price and expected fast delivery and good quality with prompt service, We have our own R&D team , and Engineer to ensure to offer the best service to clients for sustainable support .
2. May I have some samples for testing?
We offer free samples for our customers and they only need to pay the freight for samples.
3. What about the delivery ?
Usually the lead time is about 1-4 weeks after receiving payment. For normal producing parts ,Please tell us three months in advance as global sourcing plan,we would have the quantity in stock all the year
4. What about the payment terms ?
This can be discussed based on the actual order situation.
5. What about the shipment terms ?
EXW SHANGHAI ; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients
6. Do you have any minimum order quantity requirement?
Based on the different products, for first trial order to test, we can offer the quantity based on clients request, for repeated order, MOQ is based on the minimum packaging quantity.